April 28, 2024
Rouhollah (Kouroush) Gheisari

Rouhollah (Kouroush) Gheisari

Academic Rank: Associate professor
Address:
Degree: Ph.D in Nuclear Physics-Reactor
Phone: 07731222242
Faculty: Faculty of Nano and Biotechnology

Research

Title Numerical Study of a Multilayered Target for Muonic X-Ray Generation by Taking Time Delay of Muonic Atoms
Type Article
Keywords
Ion implantation, Low temperature, Two-layer hydrogen target , Time delay, Deuterium impurity
Journal JOURNAL OF LOW TEMPERATURE PHYSICS
DOI 10.1007/s10909-012-0632-5
Researchers Rouhollah (Kouroush) Gheisari (First researcher)

Abstract

The μd energetic atoms are produced by injection of fast muons into a solid hydrogen target of H2/D2, which contains a small amount of deuterium. A solid layer of D2 has been frozen on H2/D2 for ion implantation. The target has been kept at low temperature ∼3 K. Once ions are implanted into such a target in experiment, characteristic muonic X-rays are generated. Analyzing such X-rays is very useful for understanding nuclear shape of implanted ions. Here, X-ray yields have been determined by taking time delay of energetic μd(1s) atoms using an alternative kinetic approach. The introduced kinetic model describes recent experimental data well. There are reasonable agreements between obtained X-ray yields and those experimentally reported by Strasser et al.