Rouhollah (Kouroush) Gheisari

The thin layer of Silicon film has been deposited on molybdenum samples at room temperature for the first time by a mixture of silane and He gas (90 % He+10 % SiH4) using the glow discharge method as an application of a low-Z protective material to a fusion reactor. Siliconization has been conducted for 170 min with the gas pressure of 4–6 ×10-2 torr. the DC power supply parameters were as follows, the anode voltage of 500–600 V, and the current of 190-210 mA. The films have been characterized by using scanning electron microscopy, EDX, X-ray diffraction, FTIR, and AFM. SEM images show that the silicon coating covers the entire surface smoothly and there is no boundary for granulation. The thickness of the coating has been estimated to be around 450 nm using AFM measurement. The Si-O-Si tensile vibrations and Si-H tensile vibrations have been detected using the FTIR method.