March 19, 2026
Sajad Nejadhasan

Sajad Nejadhasan

Academic Rank: Assistant professor
Address: Faculty of Intelligent Systems and Data Science, 1st floor
Degree: Ph.D in Electrical engineering
Phone: 00
Faculty: Faculty of Intelligent Systems and Data Science

Research

Title PVT‐compensated low‐voltage and low‐power CMOS LNA for IoT applications
Type Article
Keywords
internet of things (IoTs), low-noise amplifier (LNA), low power, PVT compensation, sub-threshold amplifier
Journal INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
DOI https://doi.org/10.1002/mmce.22419
Researchers Sajad Nejadhasan (First researcher) , Fatemeh Zaheri (Second researcher) , Ebrahim Abiri (Third researcher) , Mohammad Reza Salehi (Fourth researcher)

Abstract

In this paper, a low-noise amplifier (LNA) with process, voltage, and temperature (PVT) compensation for low power dissipation applications is designed. When supply voltage and LNA bias are close to the subthreshold, voltage has significant impact on power reduction. At this voltage level, the gain is reduced and various circuit parameters become highly sensitive to PVT variations. In the proposed LNA circuit, in order to enhance efficiency at low supply voltage, the cascade technique with gm boosting is used. To improve circuit performance when in the subthreshold area, the forward body bias technique is used. Also, a new PVT compensator is suggested to reduce sensitivity of different circuit's parameters to PVT changes. The suggested PVT compensator employs a current reference circuit with constant output regarding temperature and voltage variations. This circuit produces a constant current by subtracting two proportional to absolute temperature currents. At a supply voltage of 0.35 V, the total power consumption is 585 μW. In different process corners, in the proposed LNA with PVT compensator, gain and noise figure (NF) variations are reduced 10.3 and 4.6 times, respectively, compared to a conventional LNA with constant bias. With a 20% deviation in the supply voltage, the gain and noise NF variations decrease 6.5 and 34 times, respectively.