مشخصات پژوهش

خانه /Stability and electronic ...
عنوان
Stability and electronic structures of triazine-based carbon nitride nanotubes
نوع پژوهش مقالات در نشریات
کلیدواژه‌ها
carbon nitride nanotubes, tube formation energy, semiconductor, triazine, double walled carbon nitride nanotube
چکیده
We investigate the possibility of forming single-walled (SWTACNNTs) and double-walled carbon nitride nanotubes (DWTACNNTs) from triazine-based C3N4 sheets (gt-C3N4) that have been synthesized recently, using calculations based on density functional theory. In contrast to the case of single-walled carbon nanotubes, the negative strain energy indicates that SWTACNNTs are appreciably more stable than a single sheet of gt-C3N4. In addition, the SWTACNNTs are chirality-specific semiconductors. Boron doping at a carbon site turns (14,0) SWTACNNT into a magnetic semiconductor, where adjacent p-magnetic centers strongly couple ferromagnetically. Phosphorus doping at a nitrogen site decreases the band gap by more than 0.28 eV. DWTACNNTs are not only more stable than constituent SWTACNNTs but also appreciably more stable than a gt-C3N4 bilayer. The band gap of (10,0)@(20,0) TACNNT is more than 0.48 eV smaller than those of the constituent SWTACNNTs.
پژوهشگران فاضل شجاعی (نفر اول)، Hong Seok Kang (نفر دوم)